Modeling of interface trap charges induced degradation in underlap DG and GAA MOSFETs

Autor:	Agrawal, Sonal, Srivastava, Anurag, Kaushal, Gaurav ⁎
Zdroj:	In Microelectronics Reliability October 2021 125
Databáze:	ScienceDirect
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect