Modelling of charge injection by multi-photon absorption in GaN-on-Si HEMTs for SEE testing

Autor: Ngom, C., Pouget, V., Zerarka, M., Coccetti, F., Crepel, O., Touboul, A., Matmat, M.
Zdroj: In Microelectronics Reliability November 2021 126
Databáze: ScienceDirect