Modelling of charge injection by multi-photon absorption in GaN-on-Si HEMTs for SEE testing
Autor: | Ngom, C., Pouget, V., Zerarka, M., Coccetti, F., Crepel, O., Touboul, A., Matmat, M. |
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Zdroj: | In Microelectronics Reliability November 2021 126 |
Databáze: | ScienceDirect |
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