Improving avalanche robustness of SiC MOSFETs by optimizing three-region P-well doping profile
| Autor: | Bai, Zhiqiang, Tang, Xiaoyan, He, Yanjing, Yuan, Hao, Song, Qingwen, Zhang, Yuming |
|---|---|
| Zdroj: | In Microelectronics Reliability September 2021 124 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect