Stability of the threshold voltage in fluorine-implanted normally-off AlN/GaN HEMTs co-integrated with commercial normally-on GaN HEMT technology
| Autor: | Albany, Florent, Lecourt, François, Walasiak, Ewa, Defrance, Nicolas, Curutchet, Arnaud, Maher, Hassan, Cordier, Yvon, Labat, Nathalie, Malbert, Nathalie |
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| Zdroj: | In Microelectronics Reliability November 2021 126 |
| Databáze: | ScienceDirect |
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