Charge trapping in 0.1 μm AlGaN/GaN RF HEMTs: Dependence on barrier properties, voltage and temperature
| Autor: | Chiocchetta, F., De Santi, C., Rampazzo, F., Meneghini, M., Meneghesso, G., Zanoni, E. |
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| Zdroj: | In Microelectronics Reliability November 2021 126 |
| Databáze: | ScienceDirect |
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