Separation of electron and hole trapping components of PBTI in SiON nMOS transistors
| Autor: | Waltl, Michael, Stampfer, Bernhard, Rzepa, Gerhard, Kaczer, Ben, Grasser, Tibor |
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| Zdroj: | In Microelectronics Reliability November 2020 114 |
| Databáze: | ScienceDirect |
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