Stable and reliable ohmic contact on p-type 4H-SiC up to 1500 h of aging at 600 °C
| Autor: | Abou Hamad, Valdemar, Abi Tannous, Tony, Soueidan, Maher, Gremillard, Laurent, Fabregue, Damien, Penuelas, Jose, Zaatar, Youssef |
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| Zdroj: | In Microelectronics Reliability July 2020 110 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect