Recovery investigation of NBTI-induced traps in n-MOSFET devices
| Autor: | Djezzar, Boualem, Benabdelmoumene, Abdelmadjid, Zatout, Boumediene, Messaoud, Dhiaelhak, Chenouf, Amel, Tahi, Hakim, Boubaaya, Mohamed, Timlelt, Hakima |
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| Zdroj: | In Microelectronics Reliability July 2020 110 |
| Databáze: | ScienceDirect |
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