Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment
| Autor: | Malagón, Daniel, Torrens, Gabriel, Segura, Jaume, Bota, Sebastià A. |
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| Zdroj: | In Microelectronics Reliability July 2020 110 |
| Databáze: | ScienceDirect |
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