Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration
| Autor: | Gao, Z., Meneghini, M., Rampazzo, F., Rzin, M., De Santi, C., Meneghesso, G., Zanoni, E. |
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| Zdroj: | In Microelectronics Reliability September 2019 100-101 |
| Databáze: | ScienceDirect |
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