Effect of TLP rise time on ESD failure modes of collector-base junction of SiGe heterojunction bipolar transistors
| Autor: | Fleury, Clément, Simbürger, Werner, Pogany, Dionyz |
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| Zdroj: | In Microelectronics Reliability September 2019 100-101 |
| Databáze: | ScienceDirect |
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