Stress investigation of annular-trench-isolated TSV by polarized Raman spectroscopy measurement and finite element simulation
| Autor: | Feng, Wei, Watanabe, Naoya, Shimamoto, Haruo, Aoyagi, Masahiro, Kikuchi, Katsuya |
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| Zdroj: | In Microelectronics Reliability August 2019 99:125-131 |
| Databáze: | ScienceDirect |
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