Numerical study on the self-heating effects for vacuum/high-k gate dielectric tri-gate FinFETs

Autor: Zhang, Guohe, Lai, Junhua, Zhu, Shengli, Wei, Sufen, Liang, Feng, Yang, Cheng-Fu
Zdroj: In Microelectronics Reliability April 2019 95:52-57
Databáze: ScienceDirect