Simulation of substrate contact effects on heavy ion-induced current transient in SiGe HBT
| Autor: | Wei, Jia-nan, He, Chao-hui, Li, Pei, Li, Yong-hong, Guo, Hong-xia |
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| Zdroj: | In Microelectronics Reliability April 2019 95:28-35 |
| Databáze: | ScienceDirect |
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