Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes
| Autor: | Oualli, M., Dua, C., Patard, O., Altuntas, P., Piotrowicz, S., Gamarra, P., Lacam, C., Jacquet, J.-C., Teisseire, L., Lancereau, D., Chartier, E., Potier, C., Delage, S.L. |
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| Zdroj: | In Microelectronics Reliability September 2018 88-90:418-422 |
| Databáze: | ScienceDirect |
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