On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs
| Autor: | Rzin, M., Chini, A., De Santi, C., Meneghini, M., Hugger, A., Hollmer, M., Stieglauer, H., Madel, M., Splettstößer, J., Sommer, D., Grünenpütt, J., Beilenhoff, K., Blanck, H., Chen, J.-T., Kordina, O., Meneghesso, G., Zanoni, E. |
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| Zdroj: | In Microelectronics Reliability September 2018 88-90:397-401 |
| Databáze: | ScienceDirect |
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