A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance
Autor: | Hachem, D., Trémouilles, D., Morancho, F., Toulon, G. |
---|---|
Zdroj: | In Microelectronics Reliability September 2018 88-90:406-410 |
Databáze: | ScienceDirect |
Externí odkaz: |