A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance

Autor: Hachem, D., Trémouilles, D., Morancho, F., Toulon, G.
Zdroj: In Microelectronics Reliability September 2018 88-90:406-410
Databáze: ScienceDirect