On the impact of substrate electron injection on dynamic Ron in GaN-on-Si HEMTs

Autor: Pagnano, Dario, Longobardi, Giorgia, Udrea, Florin, Sun, Jinming, Imam, Mohamed, Garg, Reenu, Kim, Hyeongnam, Charles, Alain
Zdroj: In Microelectronics Reliability September 2018 88-90:610-614
Databáze: ScienceDirect