Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation
| Autor: | Abbate, C., Busatto, G., Mattiazzo, S., Sanseverino, A., Silvestrin, L., Tedesco, D., Velardi, F. |
|---|---|
| Zdroj: | In Microelectronics Reliability September 2018 88-90:941-945 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect