TCAD simulation of radiation-induced leakage current in 1T1C SDRAM
Autor: | Nguyen, Hoang T., Rodriguez, A., Wrobel, F., Michez, A., Bezerra, F., Chatry, N., Vandevelde, B. |
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Zdroj: | In Microelectronics Reliability September 2018 88-90:974-978 |
Databáze: | ScienceDirect |
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