TCAD simulation of radiation-induced leakage current in 1T1C SDRAM

Autor: Nguyen, Hoang T., Rodriguez, A., Wrobel, F., Michez, A., Bezerra, F., Chatry, N., Vandevelde, B.
Zdroj: In Microelectronics Reliability September 2018 88-90:974-978
Databáze: ScienceDirect