Process variation dependence of total ionizing dose effects in bulk nFinFETs
| Autor: | Li, B., Huang, Y.-B., Yang, L., Zhang, Q.-Z., Zheng, Z.-S., Li, B.-H., Zhu, H.-P., Bu, J.-H., Yin, H.-X., Luo, J.-J., Han, Z.-S., Wang, H.-B. |
|---|---|
| Zdroj: | In Microelectronics Reliability September 2018 88-90:946-951 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect