Process variation dependence of total ionizing dose effects in bulk nFinFETs
Autor: | Li, B., Huang, Y.-B., Yang, L., Zhang, Q.-Z., Zheng, Z.-S., Li, B.-H., Zhu, H.-P., Bu, J.-H., Yin, H.-X., Luo, J.-J., Han, Z.-S., Wang, H.-B. |
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Zdroj: | In Microelectronics Reliability September 2018 88-90:946-951 |
Databáze: | ScienceDirect |
Externí odkaz: |