Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology
| Autor: | Dammann, M., Baeumler, M., Brückner, P., Kemmer, T., Konstanzer, H., Graff, A., Simon-Najasek, M., Quay, R. |
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| Zdroj: | In Microelectronics Reliability September 2018 88-90:385-388 |
| Databáze: | ScienceDirect |
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