Physics-based modeling of TID induced global static leakage in different CMOS circuits
| Autor: | Zebrev, Gennady I., Orlov, Vasily V., Gorbunov, Maxim S., Drosdetsky, Maxim G. |
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| Zdroj: | In Microelectronics Reliability May 2018 84:181-186 |
| Databáze: | ScienceDirect |
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