SiO2 tunneling and Si3N4/HfO2 trapping layers formed with low temperature processes on gate-all-around junctionless charge-trapping flash memory devices
| Autor: | Fang, Hsin-Kai, Chang-Liao, Kuei-Shu, Cheng, Chia-Hsin, Lin, Po-Yao, Huang, Wen-Hsien, Shen, Chang-Hong, Shieh, Jia-Min |
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| Zdroj: | In Microelectronics Reliability December 2018 91 Part 2:319-322 |
| Databáze: | ScienceDirect |
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