Trade-off analysis of the p-base doping on ruggedness of SiC MOSFETs
| Autor: | Kakarla, Bhagyalakshmi, Nida, Selamnesh, Mueting, Johanna, Ziemann, Thomas, Kovacevic-Badstuebner, Ivana, Grossner, Ulrike |
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| Zdroj: | In Microelectronics Reliability September 2017 76-77:267-271 |
| Databáze: | ScienceDirect |
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