Application of Scanning Capacitance Microscopy on SOI device with wafer edge low yield pattern

Autor: Chen, C.Q., Ang, G.B., Ng, P.T., Rivai, Francis, Neo, S.P., Nagalingam, D., Yip, K.H., Lam, Jeffery, Mai, Z.H.
Zdroj: In Microelectronics Reliability September 2017 76-77:141-144
Databáze: ScienceDirect