Operation of 4H-SiC high voltage normally-OFF V-JFET in radiation hard conditions: Simulations and experiment
Autor: | Popelka, S., Hazdra, P., Záhlava, V. |
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Zdroj: | In Microelectronics Reliability July 2017 74:58-66 |
Databáze: | ScienceDirect |
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