Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation
| Autor: | Syaranamual, G.J., Sasangka, W.A., Made, R.I., Arulkumaran, S., Ng, G.I., Foo, S.C., Gan, C.L., Thompson, C.V. |
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| Zdroj: | In Microelectronics Reliability September 2016 64:589-593 |
| Databáze: | ScienceDirect |
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