Influence of channel length and high-K oxide thickness on subthreshold analog/RF performance of graded channel and gate stack DG-MOSFETs
| Autor: | Swain, Sanjit Kumar, Dutta, Arka, Adak, Sarosij, Pati, Sudhansu Kumar, Sarkar, Chandan Kumar |
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| Zdroj: | In Microelectronics Reliability June 2016 61:24-29 |
| Databáze: | ScienceDirect |
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