A 2-D analytical threshold-voltage model for GeOI/GeON MOSFET with high-k gate dielectric
| Autor: | Ji, Feng, Xu, J.P., Liu, L., Tang, W.M., Lai, P.T. |
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| Zdroj: | In Microelectronics Reliability February 2016 57:24-33 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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| Autor: | Ji, Feng, Xu, J.P., Liu, L., Tang, W.M., Lai, P.T. |
|---|---|
| Zdroj: | In Microelectronics Reliability February 2016 57:24-33 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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Full Text from ScienceDirect