Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure
| Autor: | Meneghini, M., Hilt, O., Fleury, C., Silvestri, R., Capriotti, M., Strasser, G., Pogany, D., Bahat-Treidel, E., Brunner, F., Knauer, A., Würfl, J., Rossetto, I., Zanoni, E., Meneghesso, G., Dalcanale, S. |
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| Zdroj: | In Microelectronics Reliability March 2016 58:177-184 |
| Databáze: | ScienceDirect |
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