Hot carrier degradation modeling of short-channel n-FinFETs suitable for circuit simulators
| Autor: | Messaris, I., Karatsori, T.A., Fasarakis, N., Theodorou, C.G., Nikolaidis, S., Ghibaudo, G., Dimitriadis, C.A. |
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| Zdroj: | In Microelectronics Reliability January 2016 56:10-16 |
| Databáze: | ScienceDirect |
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