Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH3-plasma treated yittrium-oxynitride as interfacial passivation layer
| Autor: | Lu, H.H., Xu, J.P., Liu, L., Wang, L.S., Lai, P.T., Tang, W.M. |
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| Zdroj: | In Microelectronics Reliability January 2016 56:17-21 |
| Databáze: | ScienceDirect |
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