Impact of defect on I(V) instabilities observed on Ti/4H–SiC high voltage Schottky diodes

Autor: Abdelwahed, N., Troudi, M., Sghaier, N., Souifi, A.
Zdroj: In Microelectronics Reliability July 2015 55(8):1169-1173
Databáze: ScienceDirect