Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs
| Autor: | Bisi, D., Stocco, A., Rossetto, I., Meneghini, M., Rampazzo, F., Chini, A., Soci, F., Pantellini, A., Lanzieri, C., Gamarra, P., Lacam, C., Tordjman, M., di Forte-Poisson, M.-A., De Salvador, D., Bazzan, M., Meneghesso, G., Zanoni, E. |
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| Zdroj: | In Microelectronics Reliability August-September 2015 55(9-10):1662-1666 |
| Databáze: | ScienceDirect |
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