ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique

Autor: Rigato, Matteo, Fleury, Clément, Heer, Michael, Capriotti, Mattia, Simbürger, Werner, Pogany, Dionyz
Zdroj: In Microelectronics Reliability August-September 2015 55(9-10):1471-1475
Databáze: ScienceDirect