High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications
| Autor: | Fleury, Clément, Capriotti, Mattia, Rigato, Matteo, Hilt, Oliver, Würfl, Joachim, Derluyn, Joff, Steinhauer, Stephan, Köck, Anton, Strasser, Gottfried, Pogany, Dionyz |
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| Zdroj: | In Microelectronics Reliability August-September 2015 55(9-10):1687-1691 |
| Databáze: | ScienceDirect |
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