Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review
| Autor: | Gerrer, L., Ding, J., Amoroso, S.M., Adamu-Lema, F., Hussin, R., Reid, D., Millar, C., Asenov, A. |
|---|---|
| Zdroj: | In Microelectronics Reliability April 2014 54(4):682-697 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect