Analytical model for threshold voltage of double gate bilayer graphene field effect transistors
| Autor: | Saeidmanesh, M., Rahmani, M., Karimi, H., Khaledian, M., Ismail, Razali |
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| Zdroj: | In Microelectronics Reliability January 2014 54(1):44-48 |
| Databáze: | ScienceDirect |
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