Impact of the forming conditions and electrode metals on read disturb in HfO2-based RRAM
| Autor: | Lorenzi, P., Rao, R., Prifti, T., Irrera, F. |
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| Zdroj: | In Microelectronics Reliability September-November 2013 53(9-11):1203-1207 |
| Databáze: | ScienceDirect |
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