Impact of bilayer character on High K gate stack dielectrics breakdown obtained by conductive atomic force microscopy
| Autor: | Foissac, R. a, b, ⁎, Blonkowski, S. b, Kogelschatz, M. a, Delcroix, P. a, b, Gros-Jean, M. b, Bassani, F. a |
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| Zdroj: | In Microelectronics Reliability December 2013 53(12):1857-1862 |
| Databáze: | ScienceDirect |
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