Investigation of the degradation mechanisms of InP/InGaAs DHBT under bias stress conditions to achieve electrical aging model for circuit design
| Autor: | Ghosh, S., Grandchamp, B., Koné, G.A., Marc, F., Maneux, C., Zimmer, T., Nodjiadjim, V., Riet, M., Dupuy, J.-Y., Godin, J. |
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| Zdroj: | In Microelectronics Reliability September-November 2011 51(9-11):1736-1741 |
| Databáze: | ScienceDirect |
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