Gate-controlled field-effect diodes and silicon-controlled rectifier for charged-device model ESD protection in advanced SOI technology
| Autor: | Cao, Shuqing, Chun, Jung-Hoon, Salman, Akram A., Beebe, Stephen G., Dutton, Robert W. |
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| Zdroj: | In Microelectronics Reliability 2011 51(4):756-764 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect