Device linearity and intermodulation distortion comparison of dual material gate and conventional AlGaN/GaN high electron mobility transistor
| Autor: | Kumar, Sona P., Agrawal, Anju, Chaujar, Rishu, Gupta, R.S., Gupta, Mridula |
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| Zdroj: | In Microelectronics Reliability 2011 51(3):587-596 |
| Databáze: | ScienceDirect |
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