Design optimization of gate-silicided ESD NMOSFETs in a 45 nm bulk CMOS technology
Autor: | Alvarez, David, Chatty, Kiran, Russ, Christian, Abou-Khalil, Michel J., Li, Junjun, Gauthier, Robert, Esmark, Kai, Halbach, Ralph, Seguin, Christopher |
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Zdroj: | In Microelectronics Reliability 2009 49(12):1417-1423 |
Databáze: | ScienceDirect |
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