Effects of low gate bias annealing in NBT stressed p-channel power VDMOSFETs
| Autor: | Manić, I., Danković, D., Djorić-Veljković, S., Davidović, V., Golubović, S., Stojadinović, N. |
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| Zdroj: | In Microelectronics Reliability 2009 49(9):1003-1007 |
| Databáze: | ScienceDirect |
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