Physical degradation of GaN HEMT devices under high drain bias reliability testing
| Autor: | Park, S.Y., Floresca, Carlo, Chowdhury, Uttiya, Jimenez, Jose L., Lee, Cathy, Beam, Edward, Saunier, Paul, Balistreri, Tony, Kim, Moon J. |
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| Zdroj: | In Microelectronics Reliability 2009 49(5):478-483 |
| Databáze: | ScienceDirect |
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