Exceptional operative gate voltage induces negative bias temperature instability (NBTI) on n-type trench DMOS transistors
| Autor: | Aresu, S., Kanert, W., Pufall, R., Goroll, M. |
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| Zdroj: | In Microelectronics Reliability 2007 47(9):1416-1418 |
| Databáze: | ScienceDirect |
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