Parameters extraction of hafnium based gate oxide capacitors
Autor: | Nguyen, T., Busseret, C., Militaru, L., Poncet, A., Aimé, D., Baboux, N., Plossu, C. |
---|---|
Zdroj: | In Microelectronics Reliability 2007 47(4):729-732 |
Databáze: | ScienceDirect |
Externí odkaz: |