Optimization of HfSiON using a design of experiment (DOE) approach on 0.45 V Vt Ni-FUSI CMOS transistors
| Autor: | Rothschild, A., Mitsuhashi, R., Kerner, C., Shi, X., Everaert, J.L., Date, L., Conard, T., Richard, O., Vrancken, C., Verbeeck, R., Veloso, A., Lauwers, A., De Potter, M., Debusschere, I., Jurczak, M., Niwa, M., Absil, P., Biesemans, S. |
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| Zdroj: | In Microelectronics Reliability 2007 47(4):521-524 |
| Databáze: | ScienceDirect |
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